27 February 2012 A local vibration mode in a carbon doped (1-101)AlGaN
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Abstract
Behavior of carbon (C) doping in a (1-101)AlGaN has been investigated by grazing incidence FTIR analyses at room temperature. The sample was grown by MOVPE on (1-101)facets of GaN triangular stripes made on (111)Si substrate. Intentional C doping was performed by introducing C2H2 into the reactor during the growth. In the FTIR spectra, a C related LVM mode was found out at 950 cm-1 which was associated with A1(LO) mode of AlN at 890cm-1. The behavior was similar to the results found in an un-intentionally Al doped GaN sample. Linear chain model with an effective mass gives the LVM energy of Al-C bond at 930 cm-1, a little lower than the experimental observation. The C doping on the N site might be performed forming a complex with additional elements.
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N. Sawaki, N. Sawaki, K. Hagiwara, K. Hagiwara, K. Yamashita, K. Yamashita, N. Koide, N. Koide, Y. Honda, Y. Honda, M. Yamaguchi, M. Yamaguchi, H. Amano, H. Amano, } "A local vibration mode in a carbon doped (1-101)AlGaN", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620D (27 February 2012); doi: 10.1117/12.905529; https://doi.org/10.1117/12.905529
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