27 February 2012 A local vibration mode in a carbon doped (1-101)AlGaN
Author Affiliations +
Behavior of carbon (C) doping in a (1-101)AlGaN has been investigated by grazing incidence FTIR analyses at room temperature. The sample was grown by MOVPE on (1-101)facets of GaN triangular stripes made on (111)Si substrate. Intentional C doping was performed by introducing C2H2 into the reactor during the growth. In the FTIR spectra, a C related LVM mode was found out at 950 cm-1 which was associated with A1(LO) mode of AlN at 890cm-1. The behavior was similar to the results found in an un-intentionally Al doped GaN sample. Linear chain model with an effective mass gives the LVM energy of Al-C bond at 930 cm-1, a little lower than the experimental observation. The C doping on the N site might be performed forming a complex with additional elements.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Sawaki, N. Sawaki, K. Hagiwara, K. Hagiwara, K. Yamashita, K. Yamashita, N. Koide, N. Koide, Y. Honda, Y. Honda, M. Yamaguchi, M. Yamaguchi, H. Amano, H. Amano, } "A local vibration mode in a carbon doped (1-101)AlGaN", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620D (27 February 2012); doi: 10.1117/12.905529; https://doi.org/10.1117/12.905529

Back to Top