Mg-hydrogen interaction in AlGaN alloys

M. E. Zvanut; Ustun R. Sunay; J. Dashdorj; W. R. Willoughby; A. A. Allerman

doi:10.1117/12.916073

27 February 2012 Mg-hydrogen interaction in AlGaN alloys

M. E. Zvanut, Ustun R. Sunay, J. Dashdorj, W. R. Willoughby, A. A. Allerman

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620L (2012) https://doi.org/10.1117/12.916073
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

It is well known that hydrogen passivation of Mg in Mg-doped GaN reduces free hole concentrations. While there are numerous studies of passivation of Mg in GaN, little work has been reported concerning passivation rates in AlGaN alloys. We investigated the hydrogen interaction with Mg in nitrides by measuring the intensity of the electron paramagnetic resonance (EPR) signal associated with the acceptor. The samples were isothermally annealed in sequential steps ranging from 5 min - 6.6 h between 300 and 700 ^oC in H₂:N₂ (7%: 92%) or pure N₂. The signal intensity decreased during the H₂N₂ anneal and was revived by the N₂ anneal as expected; however, the rate at which the intensity changed was shown to depend on Al concentration. In addition, while all signals were quenched at 700 ^oC in H₂:N₂, a 750 ^oC N₂ anneal reactivated only about 30% of the Mg in the alloys and 80% of the intensity in the GaN film. These data suggest that the rate of passivation and activation of Mg by hydrogen is dependent on the concentration of Al in the Al_xGa-_1xN layer. The EPR annealing data could prove to be beneficial in improving p-type optimization in AlGaN alloys.

Citation Download Citation

M. E. Zvanut, Ustun R. Sunay, J. Dashdorj, W. R. Willoughby, and A. A. Allerman "Mg-hydrogen interaction in AlGaN alloys", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620L (27 February 2012); https://doi.org/10.1117/12.916073

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