27 February 2012 Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz
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Abstract
We characterize the transport properties of [11-20] GaN/Ga2O3 nanowire (NW)-MOSFET epitaxially grown on (0001) sapphire substrates. When passivated with 10nm-thick Ga2O3 on the {1-10-1 }GaN triangular facets, the 50 nm-dia. Ga2O3/GaN NW-MOSFET with 50nm gate length exhibits a saturation current of 130 μA, transconductance of 64 μS, current on/off ratio of 104, subthreshold swing of 100mV/dec, and unity current (power) gain bandwidth fT (fMAX) at 150 (180)GHz. Using a 3D diffusion and drift model analysis, we found that the short channel effect in a Lg=50nm Ga2O3/GaN NW-MOSFET at an aspect ratio of 5 was suppressed due to contribution from polarization-induced negative space charge of -2.8×1012 cm2 at the abrupt crystalline interface between GaN NW and sapphire. The superior DC transport properties and good RF response can be ascribed the to polarization-induced 2D electron gas (2DEG) density of 7× 1012 cm2 with mobility of 1000cm2/V-sec confined at the semi-polar {1-10-1} GaN/Ga2O3 interfaces.
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Jeng-Wei Yu, Jeng-Wei Yu, Yuh-Renn Wu, Yuh-Renn Wu, Lung-Han Peng, Lung-Han Peng, } "Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620N (27 February 2012); doi: 10.1117/12.912041; https://doi.org/10.1117/12.912041
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