27 February 2012 Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy
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Abstract
GaN nanowires are grown on Si(111) as templates for pendeoepitaxial coalescence overgrowth under different V/III ratios by molecular beam epitaxy. The degree of coalescence in the nanowire template increases with decreasing V/III ratio or doping with Mg. The morphology of the GaN nanowire template strongly influences that of the pendeoepitaxial layer after coalescence as well as its optical quality.
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Pinar Dogan, Pinar Dogan, Oliver Brandt, Oliver Brandt, Christian Hauswald, Christian Hauswald, Raffaella Calarco, Raffaella Calarco, Achim Trampert, Achim Trampert, Lutz Geelhaar, Lutz Geelhaar, Henning Riechert, Henning Riechert, } "Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620P (27 February 2012); doi: 10.1117/12.907817; https://doi.org/10.1117/12.907817
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