27 February 2012 Lasing action in gallium nitride photonic quasicrystal nanorod arrays
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We report the observation of lasing action from optically pumped gallium nitride nanorod arrays in a quasicrystal pattern. The nanorods were fabricated from a GaN substrate by nanoimprint patterned etching, followed by epitaxial regrowth to form crystalline facets. The imprint was a 12-fold symmetric quasicrystal pattern. The regrowth grew a multiple quantum well core-shell structure on nanorods. The cathodoluminescent emission of quantum wells red shifts from the bottom to top region of nanorod. Under optical pumping, multiple lasing peaks were observed. The lasing modes formed by 12-fold symmetric photonic quasicrystal nanorod arrays are discussed.
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Shih-Pang Chang, Shih-Pang Chang, Kuok-Pan Sou, Kuok-Pan Sou, Jet-Rung Chang, Jet-Rung Chang, Yuh-Jen Cheng, Yuh-Jen Cheng, Yuh-Jing Li, Yuh-Jing Li, Yi-Chen Chen, Yi-Chen Chen, Hao-Chung Kuo, Hao-Chung Kuo, Ken-Yuh Hsu, Ken-Yuh Hsu, Chun-Yen Chang, Chun-Yen Chang, } "Lasing action in gallium nitride photonic quasicrystal nanorod arrays", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620X (27 February 2012); doi: 10.1117/12.908308; https://doi.org/10.1117/12.908308

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