27 February 2012 Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS
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Abstract
Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.
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M. Meneghini, M. Meneghini, C. de Santi, C. de Santi, N. Trivellin, N. Trivellin, K. Orita, K. Orita, S. Takigawa, S. Takigawa, T. Tanaka, T. Tanaka, D. Ueda, D. Ueda, G. Meneghesso, G. Meneghesso, E. Zanoni, E. Zanoni, } "Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826215 (27 February 2012); doi: 10.1117/12.906551; https://doi.org/10.1117/12.906551
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