27 February 2012 Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion
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Abstract
The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.
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Guangyu Liu, Jing Zhang, Hongping Zhao, Nelson Tansu, "Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621F (27 February 2012); doi: 10.1117/12.909633; https://doi.org/10.1117/12.909633
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