High-voltage thin GaN LEDs array

Ray-Hua Horng; Jia-Hua Lin; Dong-Sing Wuu; Re-Ching Lin; Kun-Ching Shen

doi:10.1117/12.912270

27 February 2012 High-voltage thin GaN LEDs array

Ray-Hua Horng, Jia-Hua Lin, Dong-Sing Wuu, Re-Ching Lin, Kun-Ching Shen

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621H (2012) https://doi.org/10.1117/12.912270
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The characteristics of high voltage LED consisted of an array of 64 micro-cells GaN LEDs was investigated through using different substrate. In this study, two kinds of high voltage LEDs are presented; one is grown on sapphire substrate and the other one is on mirror/Si substrate. The output power of high voltage LEDs with sapphire and mirror/Si substrate is 170 and 216 mW at an injection current of 24 mA, respectively. The LEDs on mirror/Si substrate leads to the superior performance in output power as compared with one on sapphire substrate is attributed to the improvement of thermal dissipation and light extraction.

Citation Download Citation

Ray-Hua Horng, Jia-Hua Lin, Dong-Sing Wuu, Re-Ching Lin, and Kun-Ching Shen "High-voltage thin GaN LEDs array", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621H (27 February 2012); https://doi.org/10.1117/12.912270

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