27 February 2012 High-voltage thin GaN LEDs array
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Abstract
The characteristics of high voltage LED consisted of an array of 64 micro-cells GaN LEDs was investigated through using different substrate. In this study, two kinds of high voltage LEDs are presented; one is grown on sapphire substrate and the other one is on mirror/Si substrate. The output power of high voltage LEDs with sapphire and mirror/Si substrate is 170 and 216 mW at an injection current of 24 mA, respectively. The LEDs on mirror/Si substrate leads to the superior performance in output power as compared with one on sapphire substrate is attributed to the improvement of thermal dissipation and light extraction.
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Ray-Hua Horng, Ray-Hua Horng, Jia-Hua Lin, Jia-Hua Lin, Dong-Sing Wuu, Dong-Sing Wuu, Re-Ching Lin, Re-Ching Lin, Kun-Ching Shen, Kun-Ching Shen, "High-voltage thin GaN LEDs array", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621H (27 February 2012); doi: 10.1117/12.912270; https://doi.org/10.1117/12.912270
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