27 February 2012 Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects
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Abstract
Low-frequency noise and current-transient measurements were applied to analyze the degradation of nearly latticematched InAlN/AlN/GaN heterostructure field-effect transistors caused by electrical stress. Almost identical devices on the same wafer were stresses 7 hr. at a fixed DC drain bias of VDS=20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz- 100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4x1012 cm-2. This result is in good agreement with the reported stress effect on drain-current degradation and current-gain-cutoff-frequency measurements, and consistent with the ultrafast decay of hot-phonons due to the phonon-plasmon coupling. Moreover, the current transient (gate-lag) measurements were also performed on pristine and highly degraded devices up to 5 ms pulse durations. Drain current is almost totally lost in degraded HFETs as opposed to a very small drop for pristine devices and no recovery observed for both indicating that generation of deep traps in GaN buffer.
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Cemil Kayis, R. A. Ferreyra, Congyong Zhu, Mo Wu, X. Li, Ü. Özgür, A. Matulionis, H. Morkoç, "Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621W (27 February 2012); doi: 10.1117/12.908501; https://doi.org/10.1117/12.908501
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