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27 February 2012 Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates
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Abstract
Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73×10-2 to 2.58×10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
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Huei-Min Huang, Tien-Chang Lu, Chiao-Yun Chang, Yu-Pin Lan, Shih-Chun Ling, Wei-Wen Chan, Hao-Chung Kuo, and Shing-Chung Wang "Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Y (27 February 2012); https://doi.org/10.1117/12.906635
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