27 February 2012 Free-standing a-plane GaN substrates grown by HVPE
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Abstract
A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.
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Yin-Hao Wu, Yin-Hao Wu, Yen-Hsien Yeh, Yen-Hsien Yeh, Kuei-Ming Chen, Kuei-Ming Chen, Yu-jen Yang, Yu-jen Yang, Wei-I Lee, Wei-I Lee, } "Free-standing a-plane GaN substrates grown by HVPE", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621Z (27 February 2012); doi: 10.1117/12.907683; https://doi.org/10.1117/12.907683
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