27 February 2012 High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer
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Abstract
High performance 375 nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) with a heavy Si-doped GaN growth mode transition layer (GMTL) were fabricated by metal-organic chemical vapor deposition (MOCVD). From transmission electron microcopy (TEM) image, the dislocation densities are reduced significantly by using the GMTL technique. The threading dislocation (TD) value of AlGaN grown on GMTL was significantly decreased from the control sample value of 8×108 to 8×107 cm-2. Furthermore, the internal quantum efficiency (IQE) of the LEDs with GMTL was measured by power-dependent photoluminescence (PL) to be 40.6% higher than ones without GMTL. After vertical-type (size:1mm×1mm) LED chips were fabricated, the output power were measured by integrating sphere detector under 350 mA injection current driving. The output powers of the LEDs with and without GMTL were measured to be 286.7 and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. The GMTL leads to the superior IQE performance of the LEDs not only in decreasing the carrier consumption at nonradiative recombination centers but also in partially mitigating the efficiency droop tendency. Therefore, forming the GMTL between un-doped GaN and n-AlGaN to reduce dislocations would be a promising prospective for InGaN/AlGaN UV-LEDs to achieve high IQE.n the abstract two lines below author names and addresses.
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Shih-Cheng Huang, Shih-Cheng Huang, Po-Min Tu, Po-Min Tu, Shun-Kuei Yang, Shun-Kuei Yang, Ya-Wen Lin, Ya-Wen Lin, Chih-Peng Hsu, Chih-Peng Hsu, } "High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826221 (27 February 2012); doi: 10.1117/12.908146; https://doi.org/10.1117/12.908146
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