27 February 2012 Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
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Abstract
Semipolar (1-101) GaN layers were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. The effects of reactor pressure and substrate temperature on optical properties of (1-101) GaN were studied by steadystate and time-resolved photoluminescence. The optical measurements revealed that the optical quality of (1-101)- oriented GaN is comparable to that of c-plane GaN film grown on sapphire. Slow decay time constants, representative of the radiative recombination, for semipolar (1-101)GaN grown at 200 Torr are found to be very long (~1.8 ns), comparable to those for the state-of-art c-plane GaN templates grown using in situ epitaxial lateral overgrowth through silicon nitride nano-network. Defect distribution in the GaN stripes was studied by spatially resolved cathodeluminescence measurements. The c+-wing regions of the GaN stripes were found to be dominated by a (D0,X) emission. Only a thin slice of emission around 3.42 eV related to basal stacking faults was revealed in c--wing regions.
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N. Izyumskaya, S. J. Liu, V. Avrutin, S. Okur, F. Zhang, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D. J. Smith, H. Morkoç, "Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826224 (27 February 2012); doi: 10.1117/12.909235; https://doi.org/10.1117/12.909235
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