28 February 2012 Degradation mechanism of InAlN/GaN based HFETs under high electric field stress
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Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826225 (2012); doi: 10.1117/12.903983
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Degradation of InAlN/GaN based HFETs under stress for four bias conditions, namely, on-state high field stress (hot phonon, hot electron and self heating effect), off-state high field stress (hot electron effect), onstate low field stress (self heating effect), and reverse gate bias stress (inverse piezoelectric effect) has been examined. The degradation is characterized by monitoring electrical properties, such as, drain current reduction, gate lag, and low frequency noise. On-state high field stress has shown more than 50% reduction in the drain current and approximately 25-30 dBc/Hz increase in low frequency noise after 25 hours of stress, while other stress conditions led to much lesser degradation. It is demonstrated that the major degradation mechanism in InAlN/GaN HFETs is the hot-phonon and hot-electron effect in the realm of short term effects.
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Congyong Zhu, Mo Wu, Cemil Kayis, Fan Zhang, Xing Li, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgur, Hadis Morkoç, "Degradation mechanism of InAlN/GaN based HFETs under high electric field stress", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826225 (28 February 2012); doi: 10.1117/12.903983; https://doi.org/10.1117/12.903983
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KEYWORDS
Field effect transistors

Gallium nitride

Piezoelectric effects

Transistors

Applied physics

Reliability

Heterojunctions

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