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29 February 2012 Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 826305 (2012)
Event: SPIE OPTO, 2012, San Francisco, California, United States
Bulk ZnO crystals were grown by the hydrothermal technique with Ga2O3 or GaN added to the solution in an attempt to dope with Ga, or co-dope with Ga and N, respectively. Adding Ga2O3 alone to the growth solution significantly reduces the ZnO growth rate; however, the resulting crystal is highly conductive, with a resistivity approaching 0.01 Ω cm. In contrast, the addition of GaN had less effect on the growth of ZnO, but the crystal was of poor quality with a higher resistivity, about 0.1 Ω cm. Photoluminescence spectra at 4 K show Ga0-bound-exciton peak energies of 3.3604 and 3.3609 eV for the Ga- and Ga/N-doped crystals, respectively; these energies differ slightly from the literature value of 3.3598 eV, evidently due to compressive strain. Other peaks at 3.307, 3.290, 3.236, and 3.20 eV were found in the Ga/N-codoped ZnO after the crystal was annealed at 600°C in air. The 3.307 eV peak is the so-called A line, and likely arises from recombination of a free electron with a neutral N-related acceptor.
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Buguo Wang, Matthew Mann, Michael Snure, Michael J. Callahan, and David C. Look "Hydrothermal growth and characterization of bulk Ga-doped and Ga/N-codoped ZnO crystals", Proc. SPIE 8263, Oxide-based Materials and Devices III, 826305 (29 February 2012);

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