29 February 2012 Growth and characterization of large-diameter, lithium-free ZnO single crystals
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630E (2012) https://doi.org/10.1117/12.914059
Event: SPIE OPTO, 2012, San Francisco, California, United States
Large-diameter, lithium-free ZnO single-crystal substrates of high crystalline quality will enable development and commercialization of high-performance ZnO-based semiconductor devices, such as UV and visible light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors for variety of applications. We have recently developed a novel crystal growth technique for producing lithium-free ZnO single crystal boules of 1 inch in diameter. We also fabricated ZnO single crystal wafers in sizes up to 1 inch in diameter. Chemical purity, crystalline defects, and electrical resistivity of ZnO single crystals were analyzed. Results from crystal growth and material characterization are presented and discussed. Our research results suggest that the novel crystal growth technique is a viable production technique for producing ZnO single crystals and substrates for semiconductor device applications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shaoping Wang, Aneta Kopec, Andrew G. Timmerman, "Growth and characterization of large-diameter, lithium-free ZnO single crystals", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630E (29 February 2012); doi: 10.1117/12.914059; https://doi.org/10.1117/12.914059


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