Paper
29 February 2012 Optimization of photoluminescence and electroluminescence of silicon nanocrystals in a superlattice host
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630M (2012) https://doi.org/10.1117/12.908599
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The use of silicon superlattices is a well established technique for creating nanocrystals. Depositing superlattices allows for adjustment of nanocrystal properties, such as the emission wavelength, by varying the silicon layer thickness. Opposed to the silicon layer, the silicon dioxide thickness effects are not documented as extensively. This study looks at superlattice films with silicon and silicon dioxide layers varying from 0.4 to 0.8 nm and 2.7 to 5.1 nm respectively, deposited via a plasma enhanced chemical vapor deposition. Photoluminescence and electroluminescence measurements were taken to show an increase in the output intensity increased oxide thickness.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Roman and Dennis W. Prather "Optimization of photoluminescence and electroluminescence of silicon nanocrystals in a superlattice host", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630M (29 February 2012); https://doi.org/10.1117/12.908599
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KEYWORDS
Silica

Electroluminescence

Amorphous silicon

Silicon

Nanocrystals

Superlattices

Luminescence

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