2 March 2012 Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630R (2012) https://doi.org/10.1117/12.916013
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
GaN was grown on ZnO-buffered c-sapphire (c-Al2O3) substrates by Metal Organic Vapor Phase Epitaxy. The ZnO then served as a sacrificial release layer, allowing chemical lift-off of the GaN from the c-Al2O3 substrate via selective wet etching of the ZnO. The GaN was subsequently direct-wafer-bonded onto a glass substrate. X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray microanalysis, Room Temperature Photoluminescence & optical microscopy confirmed bonding of several mm2 of crack-free wurtzite GaN films onto a soda lime glass microscope slide with no obvious deterioration of the GaN morphology. Using such an approach, InGaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming and reusing the substrate.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Rogers, A. Ougazzaden, V. E. Sandana, T. Moudakir, A. Ahaitouf, F. Hosseini Teherani, S. Gautier, L. Goubert, I. A. Davidson, K. A. Prior, R. P. McClintock, P. Bove, H.-J. Drouhin, M. Razeghi, "Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630R (2 March 2012); doi: 10.1117/12.916013; https://doi.org/10.1117/12.916013
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