1 March 2012 Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630U (2012) https://doi.org/10.1117/12.908496
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
In this paper we show the application of Rutherford backscattering spectrometry and ion channeling (RBS/C) for the detection of compositional and strain gradients in CdZnO grown almost pseudomorphically on MgZnO. The asymmetric features revealed in X-ray diffraction studies were explained by the compositional gradient found in the first 100 nm close to the interface. Calculations of the effect of such a gradient on the strain state of the layer were developed and contrasted with RBS/C angular scans. Additionally, the substitutional behavior of Cd (and Mg) in Zn-sites was demonstrated.
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A. Redondo-Cubero, M. Brandt, F. Henneberger, E. Alves, K. Lorenz, "Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630U (1 March 2012); doi: 10.1117/12.908496; https://doi.org/10.1117/12.908496
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