Translator Disclaimer
Paper
1 March 2012 Excitonic transport in ZnO
Author Affiliations +
Proceedings Volume 8263, Oxide-based Materials and Devices III; 82630X (2012) https://doi.org/10.1117/12.912308
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The temperature dependence of diffusion length and lifetime or diffusivity of the free exciton is measured in a commercial ZnO-substrate and in an epitaxial ZnO quantum well using nm-spatially and ps-time resolved cathodoluminescence (CL) spectroscopy. The characteristic temperature dependence of the exciton mobility is a fingerprint of the underlying excitonic scattering processes. Since excitons are neutral particles scattering at ionized impurities should be not effective. With decreasing temperature diffusion lengths and lifetimes give rise to a monotonous increase of the excitonic mobility. Two different methods for determining the excitonic transport parameters will be presented. On the one hand we are able to perform completely pulsed excitation experiments and on the other hand a combination of cw- and pulsed excitation in two independent measurements are needed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Noltemeyer, Frank Bertram, Thomas Hempel, Barbara Bastek, Juergen Christen, Matthias Brandt, Michael Lorenz, and Marius Grundmann "Excitonic transport in ZnO", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82630X (1 March 2012); https://doi.org/10.1117/12.912308
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top