29 February 2012 Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 826317 (2012) https://doi.org/10.1117/12.908768
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The β-Ga2O3 films were grown on (0001) sapphire at 500 °C by metal organic chemical vapor deposition. In the analysis of crystal structure, we found that the (-201) oriented single crystal β-Ga2O3 epilayer can be obtained under low chamber pressure of 15 torr. Moreover, a metal-semiconductor-metal solar-blind deep ultraviolet photodetector was fabricated with the β-Ga2O3 epilayer. As the bias voltage is 5 V, the photodetector exhibits a relatively low dark current about 0.2 pA, which induced by the highly resistive nature of the β-Ga2O3 thin films. From the responsivity result, it can be observed that photodetector shows a maximum responsivity at 260 nm, revealing the β-Ga2O3 photodetector was really solar-blind. The responsivity of the photodetector was as high as 20.1 A/W with an applied bias of 5 V and an incident light wavelength of 260 nm. The improved performance is attributed to the high quality of β-Ga2O3 epilayer.
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Dong-Sing Wuu, Sin-Liang Ou, Ray-Hua Horng, Parvaneh Ravadgar, Tzu-Yu Wang, Hsin-Ying Lee, "Growth and characterization of Ga2O3 on sapphire substrates for UV sensor applications", Proc. SPIE 8263, Oxide-based Materials and Devices III, 826317 (29 February 2012); doi: 10.1117/12.908768; https://doi.org/10.1117/12.908768
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