1 March 2012 Analysis of peculiarities of ZnO microfilms luminescence
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Proceedings Volume 8263, Oxide-based Materials and Devices III; 82631O (2012) https://doi.org/10.1117/12.906675
Event: SPIE OPTO, 2012, San Francisco, California, United States
In luminescence spectra of certain ZnO films there is a second band in the near-ultraviolet region alongside with an exciton band. With the increasing of pumping this band intensity increases much faster than the intensity of the exciton band. It is shown that the above second band is not the so called P-line. It is rather connected with shallow level in ZnO structures. We suggest interpreting the observed effect with a due account of Burstein-Moss effect. For approximate modeling of the observed process rate equation system has been formulated. It is demonstrated that it is possible to find such parameters so that the relevant numerical solution gives a dependence of bands emission intensity ratio on pumping power that simulates quality wise experimental results.
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M. V. Ryzhkov, M. V. Ryzhkov, S. I. Rumyantsev, S. I. Rumyantsev, V. M. Markushev, V. M. Markushev, Ch. M. Briskina, Ch. M. Briskina, A. P. Tarasov, A. P. Tarasov, } "Analysis of peculiarities of ZnO microfilms luminescence", Proc. SPIE 8263, Oxide-based Materials and Devices III, 82631O (1 March 2012); doi: 10.1117/12.906675; https://doi.org/10.1117/12.906675

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