2 February 2012 Light guidance through void: silicon slot waveguides and their rigorous characterization
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Proceedings Volume 8265, Optoelectronic Integrated Circuits XIV; 82650I (2012) https://doi.org/10.1117/12.910801
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The optical properties of a nanoscale silicon slot-waveguide has been rigorously studied by using a full vectorial H-field finite element method (VFEM) based approach and presented in this paper. The variations of effective indices, effective areas, power densities in the slot-region and the confinement factors of the slot waveguide, with both horizontal and vertical slots, are thoroughly investigated for quasi-TM and TE modes. The full vectorial magnetic and electric field profiles, and Poynting vector (Sz) are also presented.
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B. M. A. Rahman, B. M. A. Rahman, D. M. H. Leung, D. M. H. Leung, S. N. Ahsan, S. N. Ahsan, Ping Tan, Ping Tan, K. T. V. Grattan, K. T. V. Grattan, } "Light guidance through void: silicon slot waveguides and their rigorous characterization", Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650I (2 February 2012); doi: 10.1117/12.910801; https://doi.org/10.1117/12.910801
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