2 February 2012 Light guidance through void: silicon slot waveguides and their rigorous characterization
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Proceedings Volume 8265, Optoelectronic Integrated Circuits XIV; 82650I (2012) https://doi.org/10.1117/12.910801
Event: SPIE OPTO, 2012, San Francisco, California, United States
The optical properties of a nanoscale silicon slot-waveguide has been rigorously studied by using a full vectorial H-field finite element method (VFEM) based approach and presented in this paper. The variations of effective indices, effective areas, power densities in the slot-region and the confinement factors of the slot waveguide, with both horizontal and vertical slots, are thoroughly investigated for quasi-TM and TE modes. The full vectorial magnetic and electric field profiles, and Poynting vector (Sz) are also presented.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. A. Rahman, B. M. A. Rahman, D. M. H. Leung, D. M. H. Leung, S. N. Ahsan, S. N. Ahsan, Ping Tan, Ping Tan, K. T. V. Grattan, K. T. V. Grattan, } "Light guidance through void: silicon slot waveguides and their rigorous characterization", Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650I (2 February 2012); doi: 10.1117/12.910801; https://doi.org/10.1117/12.910801

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