2 February 2012 Integration of 3D plasmonic devices with silicon-on-insulator-based optical circuitry
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Proceedings Volume 8265, Optoelectronic Integrated Circuits XIV; 82650N (2012) https://doi.org/10.1117/12.908502
Event: SPIE OPTO, 2012, San Francisco, California, United States
We demonstrate integrated plasmonic devices on silicon-on-insulator (SOI) substrate for photon-plasmon conversion and plasmonic mode transformation at near-infrared frequency. The plasmonic junction converts photons to surface plasmons and then back to photons with 7.35 dB conversion loss, and has successfully focused multimode plasmonic propagation to deep subwavelength (80 nm by 50 nm) single mode propagation with 2.28 dB/μm propagation loss. The integration approach leads to a robust and versatile platform for 3D nanoplasmonic gauges potentially functional in ultra-fast communications and optical sensing.
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Ruoxi Yang, Ruoxi Yang, Zhaolin Lu, Zhaolin Lu, } "Integration of 3D plasmonic devices with silicon-on-insulator-based optical circuitry", Proc. SPIE 8265, Optoelectronic Integrated Circuits XIV, 82650N (2 February 2012); doi: 10.1117/12.908502; https://doi.org/10.1117/12.908502

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