Investigation of parallel coupling mechanisms in silicon integrated chip sensors

Oleg Zero; Astrid Aksnes

doi:10.1117/12.906650

2 February 2012 Investigation of parallel coupling mechanisms in silicon integrated chip sensors

Oleg Zero, Astrid Aksnes

Proceedings Volume 8266, Silicon Photonics VII; 826604 (2012) https://doi.org/10.1117/12.906650
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The opto-mechanical properties of silicon together with its fabrication flexibility make it an excellent candidate for many integrated photonic applications. The recent trend in miniaturizing optical components, while maintaining stringent demands for their performance opens a way for various coupling mechanisms to be used for sensing and switching. However, as the system grows in complexity, the number of possible coupling channels increases. Being able to resolve the specific coupling mechanisms becomes a delicate and challenging task. At the same time, the overall performance of the device is often decided by the collective performance of all of these channels rather than by each of them separately. Because of that, it becomes essential to account for all of these mechanisms, while modelling the system. As an example of such a system, a mechanical displacement sensor is presented, whose principle is based on simultaneous evanescent coupling mechnisms between the TE- and TM-like modes. By using the FEM approach, the coupling mechanisms between the waveguides (and modes) are analyzed separately through 2-dimensional simulation and later combined and investigated globally in a series of 3-dimensional simulations.

Citation Download Citation

Oleg Zero and Astrid Aksnes "Investigation of parallel coupling mechanisms in silicon integrated chip sensors", Proc. SPIE 8266, Silicon Photonics VII, 826604 (2 February 2012); https://doi.org/10.1117/12.906650

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KEYWORDS

Waveguides

Sensors

Silicon

Refractive index

3D modeling

Directional couplers

Finite element methods

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