2 February 2012 Selecting the polarization in silicon photonic wire components
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Proceedings Volume 8266, Silicon Photonics VII; 82660G (2012) https://doi.org/10.1117/12.911368
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Silicon photonic wire waveguides are usually highly birefringent, so they are generally designed to operate for one particular polarization. For commonly used waveguides with a silicon thickness of 220 nm, TE polarization is preferred since TM is only weakly guided. For waveguides with a silicon thickness larger than 250 nm, both TE and TM polarizations have been employed. Overall, the choice of polarization has largely appeared arbitrary. In this presentation we review the pertinent polarization-dependent waveguide properties, including losses, back-reflection, polarization conversion and fabrication tolerances, with the intent to suggest guidelines for choosing the proper polarization. Through experimental evidence, we show that TM polarization has several important advantages and can support high performance resonators with a radius down to 2 μm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan-Xia Xu, Dan-Xia Xu, André Delâge, André Delâge, Jens H. Schmid, Jens H. Schmid, Rubin Ma, Rubin Ma, Shurui Wang, Shurui Wang, Jean Lapointe, Jean Lapointe, Martin Vachon, Martin Vachon, Pavel Cheben, Pavel Cheben, Siegfried Janz, Siegfried Janz, } "Selecting the polarization in silicon photonic wire components", Proc. SPIE 8266, Silicon Photonics VII, 82660G (2 February 2012); doi: 10.1117/12.911368; https://doi.org/10.1117/12.911368
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