2 February 2012 Deep-level charge state control: a novel method for optical modulation in silicon waveguides
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Proceedings Volume 8266, Silicon Photonics VII; 82660P (2012) https://doi.org/10.1117/12.908797
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
In this paper we will describe the fabrication and characterization of passive waveguides which exploit the phenomenon of variable charge state mediation of deep-levels in silicon to vary optical absorption. Silicon waveguides are doped with either thallium or indium and co-doped with phosphorus. Optical absorption is reduced s phosphorus doping is increased. These results suggest a novel method of modulation via charge-state control of the deep-level.
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Edgar Huante-Ceron, Edgar Huante-Ceron, Dylan Logan, Dylan Logan, Andrew P. Knights, Andrew P. Knights, Paul E. Jessop, Paul E. Jessop, } "Deep-level charge state control: a novel method for optical modulation in silicon waveguides", Proc. SPIE 8266, Silicon Photonics VII, 82660P (2 February 2012); doi: 10.1117/12.908797; https://doi.org/10.1117/12.908797
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