2 February 2012 Free-carrier electro-absorption and electro-refraction modulation in group IV materials at mid-infrared wavelengths
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Proceedings Volume 8266, Silicon Photonics VII; 82660Y (2012) https://doi.org/10.1117/12.908650
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Mid-infrared group IV photonics is emerging as a field with possible applications ranging from gas sensing to free-space communications. Free-carrier induced electro-absorption and electro-refraction have become the most widely used modulation mechanisms in active near-infrared silicon photonic devices. This work examines the magnitude of this effect in group IV materials at mid-infrared wavelengths. In silicon electro-absorption effects are calculated from experimental absorption coefficient data, and electro-refraction is calculated through numerical Kramers-Kronig analysis of absorption spectra. In germanium the Drude-Lorentz equations are used to estimate both change in absorption and change in refractive index.
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Milos Nedeljkovic, Richard A.. Soref, Goran Z. Mashanovich, "Free-carrier electro-absorption and electro-refraction modulation in group IV materials at mid-infrared wavelengths", Proc. SPIE 8266, Silicon Photonics VII, 82660Y (2 February 2012); doi: 10.1117/12.908650; https://doi.org/10.1117/12.908650
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