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2 February 2012Heterogeneous photonic integrated circuits
Photonic Integrated Circuits (PICs) have been dichotomized into circuits with high passive content (silica
and silicon PLCs) and high active content (InP tunable lasers and transceivers) due to the trade-off in material
characteristics used within these two classes. This has led to restrictions in the adoption of PICs to systems in which
only one of the two classes of circuits are required to be made on a singular chip. Much work has been done to
create convergence in these two classes by either engineering the materials to achieve the functionality of both
device types on a single platform, or in epitaxial growth techniques to transfer one material to the next, but have yet
to demonstrate performance equal to that of components fabricated in their native substrates. Advances in waferbonding
techniques have led to a new class of heterogeneously integrated photonic circuits that allow for the
concurrent use of active and passive materials within a photonic circuit, realizing components on a transferred
substrate that have equivalent performance as their native substrate. In this talk, we review and compare advances
made in heterogeneous integration along with demonstrations of components and circuits enabled by this technology.
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Alexander W. Fang, Gregory Fish, Eric Hall, "Heterogeneous photonic integrated circuits," Proc. SPIE 8267, Optoelectronic Interconnects XII, 82670B (2 February 2012); https://doi.org/10.1117/12.913016