2 February 2012 Heterogeneous photonic integrated circuits
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Proceedings Volume 8267, Optoelectronic Interconnects XII; 82670B (2012) https://doi.org/10.1117/12.913016
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Photonic Integrated Circuits (PICs) have been dichotomized into circuits with high passive content (silica and silicon PLCs) and high active content (InP tunable lasers and transceivers) due to the trade-off in material characteristics used within these two classes. This has led to restrictions in the adoption of PICs to systems in which only one of the two classes of circuits are required to be made on a singular chip. Much work has been done to create convergence in these two classes by either engineering the materials to achieve the functionality of both device types on a single platform, or in epitaxial growth techniques to transfer one material to the next, but have yet to demonstrate performance equal to that of components fabricated in their native substrates. Advances in waferbonding techniques have led to a new class of heterogeneously integrated photonic circuits that allow for the concurrent use of active and passive materials within a photonic circuit, realizing components on a transferred substrate that have equivalent performance as their native substrate. In this talk, we review and compare advances made in heterogeneous integration along with demonstrations of components and circuits enabled by this technology.
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Alexander W. Fang, Alexander W. Fang, Gregory Fish, Gregory Fish, Eric Hall, Eric Hall, } "Heterogeneous photonic integrated circuits", Proc. SPIE 8267, Optoelectronic Interconnects XII, 82670B (2 February 2012); doi: 10.1117/12.913016; https://doi.org/10.1117/12.913016
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