20 January 2012 Semiconductor nanostructures towards optoelectronic device applications
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We fabricated a variety of periodic and random III-V, IV, and II-IV semiconductor nanostructures based on various materials, such as Si, GaAs, ZnO, sapphire, etc., by top-down and bottom-up processes for optoelectronic device applications. The periodic arrays of nanostructures were fabricated by the dry etching after forming nanopatterns using the laser interference lithography or monolayer assembly of silica nanospheres. The random nanostructures were formed by a thermal dewetting process of continuous metal thin films and a subsequent dry etching process. Also, the porous films with nanocolumns were formed by a glancing angle deposition. The ZnO nanostructures were fabricated by the hydrothermal growth and electrochemical deposition. The optical properties of the fabricated nanostructures were measured, together with theoretical analyses using the rigorous coupled-wave analysis method. To improve the device performance, these semiconductor nanostructures were applied to the devices such as light emitting diodes, solar cells, and sensors.
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Jae Su Yu, Jae Su Yu, Jung Woo Leem, Jung Woo Leem, Yeong Hwan Ko, Yeong Hwan Ko, Hee Kwan Lee, Hee Kwan Lee, } "Semiconductor nanostructures towards optoelectronic device applications", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680A (20 January 2012); doi: 10.1117/12.907968; https://doi.org/10.1117/12.907968

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