III-V-N alloys grown by MOVPE in H2 and N2 mixed carrier gases

S. Kuboya; Q. T. Thieu; S. Sanorpim; R. Katayama; K. Onabe

doi:10.1117/12.907981

20 January 2012 III-V-N alloys grown by MOVPE in H₂ and N₂ mixed carrier gases

S. Kuboya, Q. T. Thieu, S. Sanorpim, R. Katayama, K. Onabe

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82680I (2012) https://doi.org/10.1117/12.907981
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The MOVPE growth properties of GaAsN and InAsN in H₂ and N₂ mixed carrier gases are studied. The N contents of the GaAsN and InAsN films increase with increasing the N₂/(H₂+N₂) ratio in the H₂ and N₂ mixed carrier gas. The growth rate reduction of GaAsN films in higher N₂/(H₂+N₂) ratio is explained by the smaller diffusion coefficients of precursors. The pyrolysis of 1,1-dimethylhydrazine (DMHy) is investigated by a quadrupole mass spectrometer (QMS) that is combined with the MOVPE growth reactor. At lower temperatures, the pyrolysis of DMHy in H₂ carrier gas is higher than that in N₂ carrier gas. The results indicate that the higher N contents at the higher N₂/(H₂+N₂) ratios in the mixed carrier gases are attributed to the suppression of the decomposition of III-V-N films as NHx. The higher reactor pressure also exhibits higher N contents in each carrier gas. It is interpreted as the effect of the faster growth rates and the higher DMHy pyrolysis.

Citation Download Citation

S. Kuboya, Q. T. Thieu, S. Sanorpim, R. Katayama, and K. Onabe "III-V-N alloys grown by MOVPE in H₂ and N₂ mixed carrier gases", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680I (20 January 2012); https://doi.org/10.1117/12.907981

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