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20 January 2012MBE Growth of Sb-based type-2 quantum dots for the application to
long wavelength sensors
InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by
molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown
by Stranski-Krastanov (S-K) are ~36.8 nm and ~3.1 nm, respectively. The density of QDs is ~2.5×1010 cm-2. The size
distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than
that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were
found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ~159 nm
in length, ~63 nm in width, and ~11 nm in height. A large reduction of volume of InSb structures between those in the
matrix and those on the surface was found. Threading disl°Cations resulting from the Q-dash structures were also
observed. This may be attributed to As-Sb exchange.
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E. H. Lee, J. D. Song, S. Y. Kim, M. H. Bae, I. K. Han, S. K. Chang, J. I. Lee, Q. Wang, A. Karim, J. Andersson, "MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors," Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680J (20 January 2012);