20 January 2012 Active layer design and power calculation of nitride-based THz quantum cascade lasers
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Abstract
Room temperature III-nitride QCL THz is reported. With increasing carrier concentration, the peak in optical shifts towards higher energies. Peak in the optical gain increases with carrier concentration demonstrating a blue shift correlated to quantum confinement. THz power increases linearly with current demonstrating an output power of 0.4448 μW at 6THz. A higher THz power is obtained in AlxGa1-xN/GaN/AlxGa1-x heterostructures as compared to heterostructures incorporating In. An increase in the Al-mole fraction results in higher THz power.
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HungChi Chou, HungChi Chou, Mehdi Anwar, Mehdi Anwar, Tariq Manzur, Tariq Manzur, "Active layer design and power calculation of nitride-based THz quantum cascade lasers", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680O (20 January 2012); doi: 10.1117/12.914477; https://doi.org/10.1117/12.914477
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