Active layer design and power calculation of nitride-based THz quantum cascade lasers

HungChi Chou; Mehdi Anwar; Tariq Manzur

doi:10.1117/12.914477

20 January 2012 Active layer design and power calculation of nitride-based THz quantum cascade lasers

HungChi Chou, Mehdi Anwar, Tariq Manzur

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82680O (2012) https://doi.org/10.1117/12.914477
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Room temperature III-nitride QCL THz is reported. With increasing carrier concentration, the peak in optical shifts towards higher energies. Peak in the optical gain increases with carrier concentration demonstrating a blue shift correlated to quantum confinement. THz power increases linearly with current demonstrating an output power of 0.4448 μW at 6THz. A higher THz power is obtained in Al_xGa_1-xN/GaN/Al_xGa_1-x heterostructures as compared to heterostructures incorporating In. An increase in the Al-mole fraction results in higher THz power.

Citation Download Citation

HungChi Chou, Mehdi Anwar, and Tariq Manzur "Active layer design and power calculation of nitride-based THz quantum cascade lasers", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82680O (20 January 2012); https://doi.org/10.1117/12.914477

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