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20 January 2012 Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors
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Abstract
In this paper we describe the crystal growth and surface characterisation of ultra-flat 4" GaSb substrates suitable for the epitaxial deposition of advanced infrared detectors. Results will be presented on the production of single crystal 4" GaSb ingots grown by a modified version of the liquid encapsulated Czochralski (LEC) technique , supported by the analysis of bulk material quality by dislocation Etch Pit Density (EPD) and X-Ray topography (XRT) assessments. This study will also describe how various techniques were used to characterize the quality of the bare substrate. Surface oxide properties of the GaSb substrates will be characterized by spectroscopic ellipsometry (SE). Bow, Warp and Total Thickness Variation (TTV) data will be presented for 4" wafers processed on a multiwafer-type polishing platform. This study will conclude with a 'blueprint' for the manufacture of large diameter GaSb substrates, this defining the requirements for the production use of GaSb within a commercial epitaxial wafer foundry.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark J. Furlong, Rebecca Martinez, Sasson Amirhaghi, Brian Smith, and Andrew Mowbray "Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826818 (20 January 2012); https://doi.org/10.1117/12.908303
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