20 January 2012 Surface chemistry improvement of 100mm GaSb for advanced space based applications
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Abstract
As size requirements and pixel viabilities for infrared focal plane arrays (IRFPAs) continue to increase, resolution and sensitivity requirements for high performance advanced imaging systems must meet or surpass stringent demands. Strain layer superlattice (SLS) grown by molecular beam epitaxy (MBE) on 100mm GaSb has necessitated changes in crystal processing and finishing parameters. Device layer growth typically requires a thin (2-5 nm) and highly desorbable surface oxide on very flat substrates for successful MBE. This study compares the ability for rapid pre-epi desoprtion of three different chemo-mechanical (CMP) finishes on 100mm n:GaSb: CMP-1 with sequential double side polished (DSP), CMP-2 with sequential DSP, and CMP-2 with simultaneous double side polished (S-DSP). X-ray photoelectron spectroscopy (XPS) reveals the improvement from a CMP-1 (Ga-oxide rich) to CMP-2 (Sb-oxide rich) surface. No difference in surface chemistry was found between the CMP-2 of the sequential vs. simultaneous DSP. Tropel flatness measurements of the 100mm n:GaSb substrates show that both DSP and SDSP substrate batches yield excellent (<5μm) wafer warp. However, initial studies have shown a more consistent wafer flatness with use of the simultaneous-DSP process. MBE growth on the Sb-rich surface was examined by high resolution XRD and resulted in a 64.7A periodicity and excellent FWHM (~20 arcsec) which verified the GaSb surface finish effectiveness. The resultant surface finish and flatness may provide a benefit for larger diameter GaSb IRFPA applications.
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L. P. Allen, L. P. Allen, J. P. Flint, J. P. Flint, G. Meshew, G. Meshew, J. Trevethan, J. Trevethan, M. J. Furlong, M. J. Furlong, B. Martinez, B. Martinez, A. Mobray, A. Mobray, } "Surface chemistry improvement of 100mm GaSb for advanced space based applications", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826819 (20 January 2012); doi: 10.1117/12.904778; https://doi.org/10.1117/12.904778
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