20 January 2012 Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si
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Abstract
Selected results obtained in the framework of MBE grown nanostructure for photonics on silicon are repsented in this paper. We present first a comprehensive study of GaAsPN/GaPN quantum wells (QWs) grown onto GaP substrates, in the light of a comparison with their N-free GaAsP/GaP QWs counterpart system. High density of small InGaAs/GaP Quantum Dots are presented next with their PL properties. Finally, RT photoluminescence properties of GaAsPN/GaPN QWs onto Si substrate are presented and discussed in term of carrier injection efficiency. However, for future development, optical properties of the active area must be improved and are tightly bound to the structural perfection of the GaP/Si template layer. To address this point, structural analyses including X-Ray Diffraction (lab setup and synchrotron) and Transmission Electron Microscopy have been performed, with a particular care for typical III-V/Si defect characterisation. First results of Si buffer layer growth are also presented as a perspective for future low defect MBE grown GaP/Si template layers.
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T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Letoublon, M. Perrin, N. Bertru, J. Even, N. Chevalier, H. Folliot, S. Loualiche, A. Ponchet, G. Elias, J. S. Micha, O. Durand, A. Le Corre, "Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681H (20 January 2012); doi: 10.1117/12.910279; https://doi.org/10.1117/12.910279
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