20 January 2012 Oxygen sensors made by monolayer graphene
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Abstract
The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cm×1cm will attach O2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O2 concentration and the detection limit of the simple O2 sensor was 1.25% in volume ratio.
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S. C. Hung, C. W. Chen, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi, R. Fan, and S. J. Pearton "Oxygen sensors made by monolayer graphene", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826822 (20 January 2012); doi: 10.1117/12.907768; https://doi.org/10.1117/12.907768
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