21 January 2012 Graphene-based quantum hall effect infrared photodetectors
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Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 826836 (2012); doi: 10.1117/12.921485
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Graphene is a promising material for optoelectronics and photonics. Recent experiments demonstrated graphene photodectectors based on interband transitions working at Mid and Near-IR/Visible regions. Extension of spectral range to longer wavelengths requires alternative photoresponse mechanisms. One of the mechanisms which has been proven to be efficient for THz detection in "classical" semiconductor materials is the optically-induced breakdown of quantum Hall effect. In our work we successfully demonstrated a graphene-based QHE photodetector. Our result demonstrates the potential of graphene as a material for Far-IR photodetectors. Further improvement in device design and use of more efficient radiation coupling solutions should enable graphene photodetectors with broader spectral range, higher sensitivity, and elevated operating temperatures for a variety of applications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai G. Kalugin, Lei Jing, Wenzhong Bao, Lee Wickey, Christopher Del Barga, Mekan Ovezmyradov, Eric A. Shaner, Chun Ning Lau, "Graphene-based quantum hall effect infrared photodetectors", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826836 (21 January 2012); doi: 10.1117/12.921485; https://doi.org/10.1117/12.921485
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KEYWORDS
Graphene

Photodetectors

Sensors

Antennas

Carbon dioxide lasers

Infrared photography

Infrared radiation

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