23 February 2012 High frequency binary amorphous silicon grating working as wire grid polarizer for UV applications
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Proceedings Volume 8270, High Contrast Metastructures; 82700F (2012) https://doi.org/10.1117/12.906618
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
In this work we present a wire grid polarizer with a working range down to 300 nm based on an amorphous silicon grating. For the fabrication of gratings with periods of 120 nm and 140 nm electron beam lithography and ICP etching were used. Furthermore the influence of the grating period on the optical properties was investigated. The measured maximum value of the extinction ratio for a period of 140 nm and 120 nm is 177 at a wavelength of 418 nm and 324 at a wavelength of 394 nm, respectively.
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Thomas Weber, Thomas Weber, Thomas Käsebier, Thomas Käsebier, Stefanie Kroker, Stefanie Kroker, Ernst-Bernhard Kley, Ernst-Bernhard Kley, Andreas Tünnermann, Andreas Tünnermann, } "High frequency binary amorphous silicon grating working as wire grid polarizer for UV applications", Proc. SPIE 8270, High Contrast Metastructures, 82700F (23 February 2012); doi: 10.1117/12.906618; https://doi.org/10.1117/12.906618
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