Paper
7 February 2012 Recent advances on CW current injection blue VCSELs
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Abstract
The current injection GaN-based vertical cavity surface emitting lasers with hybrid mirrors have demonstrated the CW operation at room temperature. The laser hybrid cavity composes of a 29-pair high-reflectivity AlN/GaN bottom DBR, a 7-lamda cavity region, and a 10-pair SiO2/Ta2O5 dielectric DBR. The laser structure has utilized a thin ITO layer of 30 nm as the transparent conducting layer, combining with a thin heavily doped p-type InGaN contact layer to reduce the optical loss while maintaining good current spreading capability. The laser has typical emission wavelength around 412 nm with a threshold current of about 9.7 mA at room temperature. Further details of the laser design and performance characteristics are described.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shing-Chung Wang, Tien-Chang Lu, and Hao-Chung Kuo "Recent advances on CW current injection blue VCSELs", Proc. SPIE 8276, Vertical-Cavity Surface-Emitting Lasers XVI, 827607 (7 February 2012); https://doi.org/10.1117/12.907056
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Cited by 7 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Stereolithography

Gallium nitride

Reflectivity

Aluminum nitride

Indium gallium nitride

Dielectrics

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