Proceedings Volume 8277 is from: Logo
SPIE OPTO
21-26 January 2012
San Francisco, California, United States
Front Matter: Volume 8277
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827701 (15 February 2012); doi: 10.1117/12.927872
New Material and Device Concepts I
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827702 (7 February 2012); doi: 10.1117/12.907098
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827703 (9 February 2012); doi: 10.1117/12.907533
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827705 (9 February 2012); doi: 10.1117/12.907432
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827706 (9 February 2012); doi: 10.1117/12.906609
Pushing Performance Limits I
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827708 (9 February 2012); doi: 10.1117/12.906737
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770A (9 February 2012); doi: 10.1117/12.910238
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770B (9 February 2012); doi: 10.1117/12.906607
Pushing Performance Limits II
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770C (9 February 2012); doi: 10.1117/12.905873
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770D (9 February 2012); doi: 10.1117/12.910177
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770E (9 February 2012); doi: 10.1117/12.905745
Nitrides
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770H (9 February 2012); doi: 10.1117/12.906741
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770J (14 February 2012); doi: 10.1117/12.909165
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770K (9 February 2012); doi: 10.1117/12.917469
Multi-wavelength, Tunable, and DFB QCLs
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770R (9 February 2012); doi: 10.1117/12.906048
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770S (9 February 2012); doi: 10.1117/12.920055
Tunable QCLs and New Designs
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770V (9 February 2012); doi: 10.1117/12.907535
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770W (9 February 2012); doi: 10.1117/12.907439
New Material and Device Concepts II
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827711 (9 February 2012); doi: 10.1117/12.913613
External Cavity
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827712 (9 February 2012); doi: 10.1117/12.909305
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827713 (9 February 2012); doi: 10.1117/12.907953
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827714 (9 February 2012); doi: 10.1117/12.905085
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827715 (9 February 2012); doi: 10.1117/12.909162
Mid-infrared Lasers
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771B (9 February 2012); doi: 10.1117/12.905930
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771C (9 February 2012); doi: 10.1117/12.909033
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771D (9 February 2012); doi: 10.1117/12.914453
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771E (9 February 2012); doi: 10.1117/12.910586
High Power I
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771G (9 February 2012); doi: 10.1117/12.907212
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771H (9 February 2012); doi: 10.1117/12.905945
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771I (9 February 2012); doi: 10.1117/12.905069
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771J (9 February 2012); doi: 10.1117/12.909524
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771K (9 February 2012); doi: 10.1117/12.907936
High Power II
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771L (9 February 2012); doi: 10.1117/12.907112
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771M (9 February 2012); doi: 10.1117/12.907843
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771N (9 February 2012); doi: 10.1117/12.908604
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771O (9 February 2012); doi: 10.1117/12.909054
High-performance and High-power Mid-IR Lasers I
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771S (9 February 2012); doi: 10.1117/12.909556
High-performance and High-power Mid-IR Lasers II
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771T (9 February 2012); doi: 10.1117/12.909198
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771U (9 February 2012); doi: 10.1117/12.906717
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771W (9 February 2012); doi: 10.1117/12.905521
Poster Session
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771Y (9 February 2012); doi: 10.1117/12.907622
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771Z (9 February 2012); doi: 10.1117/12.908118
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827720 (9 February 2012); doi: 10.1117/12.908544
Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827721 (9 February 2012); doi: 10.1117/12.909705
Back to Top