7 February 2012 Photo-pumped GaAs1&-xBix lasing operation with low-temperature-dependent oscillation wavelength
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827702 (2012) https://doi.org/10.1117/12.907098
Event: SPIE OPTO, 2012, San Francisco, California, United States
We report here the photo-pumped lasing operation of GaAs1-xBix with low-temperature-dependent oscillation wavelengths, and show future prospects for the fabrication of Bi-based lasers. The GaAs0.975Bi0.025 active layer was grown at 350 °C by molecular beam epitaxy. The lasing oscillation from a GaAs0.975Bi0.025/GaAs semiconductor chip with a Fabry-Perot cavity was observed by photo-pumping. The characteristic temperature of the laser was 83 K in the range between 160 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is 40% of the temperature coefficient of the band gap of GaAs in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to higher energies. This result is probably due to carrier behaviors at the GaAs0.975Bi0.025/GaAs heterointerface, in which a large valence band offset and an almost flat conduction band offset are expected.
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Yoriko Tominaga, Yoriko Tominaga, Kunishige Oe, Kunishige Oe, Masahiro Yoshimoto, Masahiro Yoshimoto, } "Photo-pumped GaAs1&-xBix lasing operation with low-temperature-dependent oscillation wavelength", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827702 (7 February 2012); doi: 10.1117/12.907098; https://doi.org/10.1117/12.907098


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