8 February 2012 Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827705 (2012) https://doi.org/10.1117/12.907432
Event: SPIE OPTO, 2012, San Francisco, California, United States
A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. The lateral junction is optimized to efficiently inject current into a photonic crystal nanocavity. We have demonstrated electrically pumped lasing by using the lateral junction to pump a quantum dot photonic crystal nanocavity laser. Continuous wave lasing is observed at temperatures up to 150K, and a threshold of 181nA at 50K is demonstrated - the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature we find that our devices do not lase, but behave as single-mode light-emitting diodes (LEDs). When directly modulated, we find that our LEDs have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators in the same lateral junction platform.
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Gary Shambat, Gary Shambat, Bryan Ellis, Bryan Ellis, Marie Mayer, Marie Mayer, Arka Majumdar, Arka Majumdar, Jan Petykiewicz, Jan Petykiewicz, Tomas Sarmiento, Tomas Sarmiento, James Harris, James Harris, Eugene E. Haller, Eugene E. Haller, Jelena Vuckovic, Jelena Vuckovic, "Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827705 (8 February 2012); doi: 10.1117/12.907432; https://doi.org/10.1117/12.907432

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