8 February 2012 Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827706 (2012) https://doi.org/10.1117/12.906609
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass production with low cost of electrically driven PCSELs.
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Yufei Wang, Yufei Wang, Hongwei Qu, Hongwei Qu, Wenjun Zhou, Wenjun Zhou, Bin Jiang, Bin Jiang, Jianxin Zhang, Jianxin Zhang, Aiyi Qi, Aiyi Qi, Lei Liu, Lei Liu, Feiya Fu, Feiya Fu, Wanhua Zheng, Wanhua Zheng, } "Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827706 (8 February 2012); doi: 10.1117/12.906609; https://doi.org/10.1117/12.906609
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