8 February 2012 AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers for low-driving-current high-speed direct modulation
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82770B (2012) https://doi.org/10.1117/12.906607
Event: SPIE OPTO, 2012, San Francisco, California, United States
AlGaInAs-MQW distributed reflector (DR) laser with semi-insulating buried-heterostructure (SI-BH) has been developed as a high speed light source for short reach data transmissions. The DR laser has DBR mirrors on both sides of a DFB active region. Owing to the increased optical feedback with these DBR mirrors, we can obtain short-cavity lasers without increasing threshold gain. The small active region of the DR laser, which comes from the combination of the short cavity structure and the SI-BH waveguide, makes driving current lower. The fabricated DR lasers have shown excellent characteristics such as stable single mode operation, and high values of relaxation oscillation frequencies under low driving current in a wide temperature range. We have achieved 25- and 40-Gbps direct modulation with low driving current. Using four different wavelength DR lasers, whose lasing wavelengths coincide with LAN-WDM grid, 25.8- Gbps direct modulations with sufficient mask margins was obtained. Using 1.55-μm-wavelength DR lasers, we achieved 40-Gbps direct modulation with 5 dB dynamic extinction ratio with the driving current less than 50 mA even at 85°C. 40-Gbps fiber transmission over 10-km single mode fiber under the operation conditions up to 70°C was also confirmed in 1.3-μm wavelength.
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Takasi Simoyama, Takasi Simoyama, Manabu Matsuda, Manabu Matsuda, Shigekazu Okumura, Shigekazu Okumura, Ayahito Uetake, Ayahito Uetake, Mitsuru Ekawa, Mitsuru Ekawa, Tsuyoshi Yamamoto, Tsuyoshi Yamamoto, } "AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers for low-driving-current high-speed direct modulation", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770B (8 February 2012); doi: 10.1117/12.906607; https://doi.org/10.1117/12.906607

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