8 February 2012 (Al,In)GaN laser diodes with optimized ridge structures
Author Affiliations +
Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82770H (2012) https://doi.org/10.1117/12.906741
Event: SPIE OPTO, 2012, San Francisco, California, United States
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 nm to 425 nm. Using different commercially available free standing GaN substrates, we adjust the epitaxial design and optimize the processing sequence for the different kinds of substrates. In particular we focus on the ridge formation. We compare different fabrication methods to obtain devices with ridge widths around ≤2 μm. So far, we have achieved threshold currents around 60 mA and slope efficiencies exceeding 1 W/A.
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Katarzyna Holc, Katarzyna Holc, Klaus Köhler, Klaus Köhler, Wilfried Pletschen, Wilfried Pletschen, Joachim Wagner, Joachim Wagner, Ulrich T. Schwarz, Ulrich T. Schwarz, } "(Al,In)GaN laser diodes with optimized ridge structures", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82770H (8 February 2012); doi: 10.1117/12.906741; https://doi.org/10.1117/12.906741

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