Strained confinement layers in InP quantum dot lasers

Stella N. Elliott; Peter M. Smowton; Andrey B. Krysa

doi:10.1117/12.913613

8 February 2012 Strained confinement layers in InP quantum dot lasers

Stella N. Elliott, Peter M. Smowton, Andrey B. Krysa

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827711 (2012) https://doi.org/10.1117/12.913613
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We demonstrate lower temperature sensitivity at high temperature in a strained layer InP/AlGaInP self-assembled quantum dot design grown by MOVPE. The lasers emit between 700 - 730 nm, finding application in photodynamic therapies and bio-photonic sensing. We previously achieved a 300 K threshold current density of 150 Acm^-2 in similar structures for 2mm long lasers with as-cleaved facets, however at elevated temperatures J_th increases rapidly with temperature. To address this issue we redesign the layers around the active regions, consisting of five layers of dots, each grown on a lower confining layer of (Al_0.30Ga_0.70)InP lattice matched to GaAs, formed from 3 mono-layers of InP and with a GaxIn(1-x)P upper confining layer. We grew two series of samples, x=0.43-0.58 with (Al_0.70Ga_0.30)_0.51In_0.49P waveguide claddings, and x=0.52-0.58 (AlInP claddings). Dot properties are strongly influenced by the UCL. Properties varied with Ga fraction. Measured absorption and lasing energies increase with Ga percentage, maintaining a constant separation from upper confining layer transition energies. A Ga fraction of x=0.54 (lightly tensile strained with respect to GaAs) gave the strongest and most well defined absorption, the lowest 300K Jth for 2mm long broad area lasers (uncoated facets) of 180 Acm^-2 and lowest rate of J_th increase with temperature.

Citation Download Citation

Stella N. Elliott, Peter M. Smowton, and Andrey B. Krysa "Strained confinement layers in InP quantum dot lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827711 (8 February 2012); https://doi.org/10.1117/12.913613

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