8 February 2012 Broadband modeless cw quantum-dot semiconductor laser: design and coherence properties
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Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827712 (2012) https://doi.org/10.1117/12.909305
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
We demonstrate broadband (THz) cw operation of a modeless external-cavity quantum-dot semiconductor diode laser. The laser cavity design is based on a frequency-shifted-feedback laser design using an intracavity acoustooptic frequency shifter. The rms intensity fluctuations are < 0.5% and the coherence time is 1 μs. The spectral optical power density is (see manuscript) 0.2 μW/MHz.
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Arnaud Garnache, Arnaud Garnache, Claire Michel, Claire Michel, Mikhael Myara, Mikhael Myara, } "Broadband modeless cw quantum-dot semiconductor laser: design and coherence properties", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827712 (8 February 2012); doi: 10.1117/12.909305; https://doi.org/10.1117/12.909305
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